Dispersion Mechanism of Superfine SiC Particles in the Different Condition Liquid

SiC@A1(OH)₃-Y(OH)₃ core-shell composite particles are synthesized by co-precipitation method for strengthening the antioxidation of SiC at high temperature. To reach better A1(OH)₃-Y(OH)₃ composite shell and higher coating ratio on the SiC particles surfaces, SiC particles must be adequately dispersed in the SiC suspension during the coating process. The dispersion mechanism of SiC particles is investigated by the sedimentation method. Through test and analysis, the optimum conditions of the dispersion of SiC particles in the SiC suspension are sedimentating for 10 minutes, ultrasonic dispersion for 10 minutes, the lower SiC concentration, pH = 9, the dispersant content for the 2% volume of SiC suspension and using the polyelectrolyte dispersant, respectively.     

碳纤维表面原位SiC纳米纤维的合成与生长

基于化学气相反应法,以高纯Si和SiO₂为反应源材料,在碳纤维表面原位生长β-SiC纳米纤维。采用XRD、SEM和TEM 等分析测试手段对SiC纳米纤维进行了表征分析,研究了不同反应温度和时间对生成β-SiC纳米纤维微观形貌和结构的影响,并探讨了β-SiC纳米纤维的生长机制。研究结果表明：采取化学气相反应法能够制备高质量、高纯度的β-SiC纳米纤维,纳米纤维的直径约为100~300 nm。随着反应温度的提高和时间的延长,纳米纤维的产额增加,且微观组织形貌发生了变化。结合制备过程和纳米纤维微观结构的观察分析,表明气-固(VS)机制是SiC纳米纤维生长的主要机理。     

二维半导体材料与器件——从传统二维光电材料到石墨炔

近年来,二维半导体材料由于其独特的材料结构和电子输运特性得到了科学界的广泛关注,被应用于光电器件、催化和生物传感器等领域。本文系统概述了传统二维材料以及新兴二维材料石墨炔的发现和发展历程。重点聚焦在二维材料在光探测器领域中的应用,探讨了不同二维材料体系及器件结构对光探测器性能的影响;并详细介绍了新兴二维材料——石墨炔,及其合成和应用。展望了传统二维材料及石墨炔在光电转换器件的应用中所面临的机遇和挑战。     

Selective area laser deposition of FCC beta silicon carbide

Silicon Carbide (SiC) has been deposited onto an alumina substrate by the thermal decomposition of the gaseous precursor tetramethylsilane (TMS). A 500 W ytterbium fibre laser was used to heat the surface of an alumina substrate locally, resulting in deposition of SiC at the sample surface. The SiC deposit was analysed using energy dispersive X‐ray spectroscopy and X‐ray diffraction (XRD). The deposit was confirmed to be silicon carbide and found to be face centre cubic (FCC) crystal structure. Raman spectroscopy was used to measure the stoichiometry of the deposit which initially was found to be carbon rich. Further analysis by Raman spectroscopy suggests the deposit may be more stoichiometric following a two hour thermal treatment of the sample at 600 degrees celcius in an atmosphere of air.     

Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate

Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0 0 0 1) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current–voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface.     

APU故障智能诊断系统设计

针对高旋环境下测试困难、测量精度低这一问题,提出了一种能在高旋环境下实现轴向减速装置,以达到稳定的良好的测试环境。该装置通过驱动仓内大量程陀螺仪测得的转速反馈给控制系统,控制系统输出控制信号来控制伺服电机,同时电机捷联内筒仓,使其相对外部转动方向反向旋转,实现轴向减速。实验结果表明,该装置可在高旋弹药飞行过程中提供稳定测试环境,从而得到更精准的姿态解算结果,为高旋环境下的测试提供了新的思路,具有广阔的应用前景。     

铜锌锡硫薄膜材料及其器件应用研究进展

铜锌锡硫薄膜材料组成元素储量丰富, 环境友好, 成本低廉, 成为最具前景的薄膜材料之一. 目前, Cu₂ZnSn(S, Se)₄ (CZTSSe)薄膜太阳电池的最高转换效率已经达到12.6%. 本文总结了Cu₂ZnSnS₄ (CZTS)的发展历史, 依次介绍了CZTS薄膜材料的结构特性、光学特性、电学特性、界面特性和Na对CZTS 薄膜的影响, 详细介绍了CZTS薄膜的制备方法及器件应用的最新研究进展, 总结了目前CZTS薄膜太阳电池发展中存在的问题, 展望了今后的研究方向.     

不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

电荷耦合器件在质子辐照下的粒子输运仿真与效应分析

应用蒙特卡洛方法计算了质子在科学级电荷耦合器件(charge-coupled device, CCD) 结构中的能量沉积, 并结合该CCD的质子辐照试验及退火试验数据, 分析了器件的辐射损伤机理. 仿真计算体硅内沉积的位移损伤剂量和栅氧化层的电离损伤剂量, 辐照与退火试验过程中主要考察暗信号、电荷转移效率两个参数的变化规律. 研究结果显示, 暗信号和电荷转移效率的变化规律与位移、电离损伤剂量一致; 退火后暗信号大幅度降低, 辐照导致的表面暗信号增加占总暗信号增加的比例至少为80%; 退火后电荷转移效率恢复较小, 电荷转移效率降低的原因主要为体缺陷. 通过总结试验规律, 推导出了电荷转移效率退化程度的预估公式及其损伤因子k_damage.     

In-Situ Synthesis and Characterization of Nanocomposites in the Si-Ti-N and Si-Ti-C Systems

The pyrolysis (1000 °C) of a liquid poly(vinylmethyl-co-methyl)silazane modified by tetrakis(dimethylamido)titanium in flowing ammonia, nitrogen and argon followed by the annealing (1000–1800 °C) of as-pyrolyzed ceramic powders have been investigated in detail. We first provide a comprehensive mechanistic study of the polymer-to-ceramic conversion based on TG experiments coupled with in-situ mass spectrometry and ex-situ solid-state NMR and FTIR spectroscopies of both the chemically modified polymer and the pyrolysis intermediates. The pyrolysis leads to X-ray amorphous materials with chemical bonding and ceramic yields controlled by the nature of the atmosphere. Then, the structural evolution of the amorphous network of ammonia-, nitrogen- and argon-treated ceramics has been studied above 1000 °C under nitrogen and argon by X-ray diffraction and electron microscopy. HRTEM images coupled with XRD confirm the formation of nanocomposites after annealing at 1400 °C. Their unique nanostructural feature appears to be the result of both the molecular origin of the materials and the nature of the atmosphere used during pyrolysis. Samples are composed of an amorphous Si-based ceramic matrix in which TiN_xC_y nanocrystals (x + y = 1) are homogeneously formed “in situ” in the matrix during the process and evolve toward fully crystallized compounds as TiN/Si₃N₄, TiN_xC_y (x + y = 1)/SiC and TiC/SiC nanocomposites after annealing to 1800 °C as a function of the atmosphere.